Principal SI Design Engineer
Ofcconference
- Bristol, England, United Kingdom
- Bristol, England, United Kingdom
Über
Our Team The PIC Components and Technology Development team are responsible for the research and development of advanced technology platforms and solutions for the next generation of optical connectivity in AI fabrics, data centers, and datacom applications. Reporting to the Director of Photonics Technology, you will be a key member of the team and will serve as the technical lead for developing advanced integrated RF interconnect technologies such as TSV and EPIC for 400G/L PAM4, CPO, and 1.6T/3.2T coherent products and will closely collaborate with the PIC component design, signal integrity, layout, test & reliability, and transceiver design teams as well as with external partners like semiconductor foundries, OSATs, CMs, and vendors.
This role can be based anywhere in the United States or Canada.
What You Will Do
Lead the R&D, design, and EVT/DVT activities with regards to developing advanced integrated RF interconnect solutions for 400G/L PAM4, CPO, and 1.6T/3.2T coherent products
Collaborate with the SI/PI, opto‑mechanics, packaging, and test and reliability teams to provide appropriate test vehicles for EVT/DVT of advanced integrated RF interconnects
Work with external partners, foundries, contract manufacturers, and OSATs to develop required processes and demonstrate production‑level performance, reliability, and quality
Intimately collaborate with the SI/PI and transceiver design teams to build and validate predictive RF models for pluggables and transponders including external ASICs components such as DRV, TIA, DSP (LPO, LRO)
Collaborate with the PIC component design and PDK teams in developing advanced modulator devices for the next generation of PIC products.
Mentor other SI/PI engineers and cross‑functional groups on advanced EM simulation and design techniques based on commercial software tools and custom codes
Who You Are (Basic Qualifications)
PhD typically in Electrical Engineering, Microwave Photonics, Physics or related technical fields
At least 10 years of relevant industry experience in designing advanced RF interconnects and/or signal/power integrity for optical connectivity applications
Expertise of Si and/or III‑V photonic integrated circuits (PICs)
Experience with CMOS semiconductor and backend processes as well as packaging ecosystem
Expert level user of commercial modeling tools such as Ansys HFSS, ADS, or equivalent software
For this role, we anticipate paying $200,000 - $300,000 per year. This role is eligible for variable pay, issued as a monetary bonus or in another form.
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Sprachkenntnisse
- English
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