Process Integration Engineer - DRAM R&D

Our vision is to transform how the world uses information to enrich life for all .

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

We are seeking an exceptionally skilled Principal Engineer in DRAM R&D Process Integration (PI) to be part of a groundbreaking team in Boise. This is your chance to influence the trajectory of next-generation DRAM technologies and collaborate with world-class experts! In this role, you will lead the development and improvement of capacitor module flows for upcoming DRAM nodes. You will address complex integration challenges and ensure the production of reliable, high-yield DRAM products. Your work will be essential to Micron’s DRAM scaling roadmap.

Responsibilities:

• Architect and optimize advanced capacitor process flows, including build rules and electrical/mechanical performance specifications.

• Resolve multi-module integration issues involving interactions across Photo, Etch, Materials, Device, and Cell.

• Drive continuous improvement in capacitor-related benchmarks, such as Cs uniformity, leakage, TDDB, and long-term reliability.

• Develop and complete structured DOEs to support technology learning, defect reduction, and performance improvement.

Yield, Reliability, and