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  • Emplois similaires à : Memory Design Engineer - DRAM & HBM Innovation
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Memory Circuit Design Engineer — Hybrid, High-Impact InnovationIntel CorporationHillsboro, Oregon, United States
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Memory Circuit Design Engineer — Hybrid, High-Impact Innovation

Intel Corporation
  • US
    Hillsboro, Oregon, United States
  • US
    Hillsboro, Oregon, United States

À propos

Intel Corporation is seeking a Memory Circuit Design Engineer to join their Advanced Design team in Hillsboro, Oregon. The role focuses on developing cutting-edge memory technology, optimizing performance, and collaborating across various technology development areas. Successful candidates will possess a Master’s degree or PhD in Electrical Engineering and have relevant experience in memory circuit design and EDA tools. The position offers a hybrid work model with competitive salary and benefits.
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  • Hillsboro, Oregon, United States

Compétences linguistiques

  • English
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