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  • Emplois similaires à : DRAM Architect – Staff Engineer
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Staff HBM Design ArchitectMicron Technology • United States
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Staff HBM Design Architect

Micron Technology
  • US
    United States
  • US
    United States
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À propos

HBM Design Architect
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the HBM Architecture team at Micron, focused on pushing the limits of memory performance for AI, ML, and high‑performance computing. We design advanced HBM solutions that enable breakthrough technologies—from immersive computing to next‑generation neural networks. Our work combines deep technical expertise with a strong culture of integrity, collaboration, and innovation. In this role, you will be an HBM Design Engineer contributing to the design and analysis of digital and analog circuits for advanced HBM products. You will work closely with an experienced architecture and design team to evaluate functionality, optimize performance, and explore new memory architectures. Your work will directly influence the correctness, efficiency, and scalability of Micron's next‑generation HBM designs. Responsibilities: Design and analyze digital and analog DRAM circuits including simulation, optimization, and floorplanning Evaluate full‑chip or block‑level functionality and develop solutions to ensure functional correctness Analyze timing, power, area, and complexity trade‑offs in high‑speed DRAM or mixed‑signal designs Perform architectural pathfinding and feasibility analysis for future HBM products Contribute to the design and optimization of memory, logic, and analog circuits Minimum Qualifications: Bachelor's degree in Electrical Engineering or related field 3+ years of relevant engineering experience Strong knowledge of CMOS circuit design and semiconductor device physics Experience with schematic entry and circuit simulation using FineSim and/or HSPICE Strong problem‑solving and analytical skills Preferred Qualifications: Master's degree or higher in Electrical Engineering or related field Experience with advanced DRAM architectures such as 3D DRAM Background in high‑speed clocking, interfaces, or power delivery optimization Experience in mixed‑signal or custom circuit design Strong communication skills and ability to collaborate across design and verification teams The US base salary range that Micron Technology estimates it could pay for this full-time position is: $146,000.00 - $297,000.00 a year Additional compensation may include benefits, bonuses and equity.Our salary ranges are determined by role, level, and location. The range displayed on each job posting reflects the minimum and maximum target base pay for new hire salaries of the position across all US locations. Within the range, individual pay is determined by work location and additional job-related factors, including knowledge, skills, experience, tenure and relevant education or training. The pay scale is subject to change depending on business needs. Your recruiter can share more about the specific salary range for your preferred location during the hiring process. Please note that the compensation details listed in US role postings reflect the base salary only, and do not include bonus, equity, or benefits. Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.
  • United States

Compétences linguistiques

  • English
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